Low-pressure chemical vapor deposition apparatus and thin-film deposition method thereof

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United States of America Patent

PATENT NO 9478440
APP PUB NO 20140322900A1
SERIAL NO

14363719

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A low-pressure chemical vapor deposition (LPCVD) apparatus and a thin-film deposition method thereof. The apparatus comprises a reaction furnace, having reaction gas input pipelines respectively arranged at a furnace opening part and a furnace tail part. During thin film deposition, each reaction gas is synchronously introduced into the reaction furnace through the input pipeline at the furnace opening part and the input pipeline at the furnace tail part.

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Patent Owner(s)

  • UNIVERSITY OF UTAH;WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fan, Jianchao Jiangsu, CN 1 0
Guo, Qijun Jiangsu, CN 1 0
Wang, Xunhui Jiangsu, CN 1 0
Wu, Xiao Jiangsu, CN 80 592

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