Transparent resistive random access memory cells
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United States of America Patent
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Nov 1, 2016
Grant Date -
Apr 7, 2016
app pub date -
Oct 2, 2014
filing date -
Oct 2, 2014
priority date (Note) -
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Abstract
Provided are resistive switching cells and methods of using such cells for controlling operation of liquid crystal display (LCD) cells in LCD devices. A resistive switching cell has two electrodes formed from transparent conductive oxides, such as indium oxide, indium tin oxide, or zinc oxide. One electrode may be connected to a LCD cell thereby forming an in series connection between the resistive switching cell and LCD cell. The other electrode may be used to power the LCD cell through the resistive switching cell. The resistive switching cell also includes a resistive switching layer disposed between the two electrodes. When the resistive switching layer is in its low resistive state, the LCD cell is subjected to an operating potential and produces light. However, when the resistive switching layer is in its high resistive state, the LCD cell is not subjected to the operating potential and does not produce light.
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