Semiconductor device with a resistance element in a trench
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United States of America Patent
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Nov 1, 2016
Issued Date -
N/A
app pub date -
Apr 28, 2008
filing date -
May 25, 2007
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Abstract
A semiconductor device has a semiconductor substrate, an insulating film, a semiconductor element and a resistance element. The semiconductor substrate has a first trench. The insulating film covers an inner surface of the first trench. The semiconductor element has an electrode. The resistance element is electrically connected to the electrode to form a resistance to a current flowing through the electrode, and is arranged in the first trench with the insulating film therebetween. Thereby, the semiconductor device can have a resistance element that has a small footprint and can pass a large current with high reliability.
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