Pattern-forming method

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United States of America Patent

PATENT NO 9487868
APP PUB NO 20150191829A1
SERIAL NO

14591323

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.

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Patent Owner(s)

Patent OwnerAddress
JSR CORPORATION9-2 HIGASHI-SHINBASHI 1-CHOME MINATO-KU TOKYO 105-8640

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Komatsu, Hiroyuki Tokyo, JP 81 469
Minegishi, Shinya Tokyo, JP 28 124
Nagai, Tomoki Tokyo, JP 67 496
Naruoka, Takehiko Tokyo, JP 47 211
Sakai, Kaori Tokyo, JP 22 65

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