Multiple bit per cell dual-alloy GST memory elements

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United States of America Patent

PATENT NO 9490426
APP PUB NO 20160012889A1
SERIAL NO

14561679

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Abstract

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In various embodiments, a memory cell for storing two or more bits of information includes two series-connected memory storage elements composed of programmable materials having different melting points, enabling independent programming of the storage elements via different current pulses.

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Patent Owner(s)

Patent OwnerAddress
WESTERN DIGITAL TECHNOLOGIES INC3355 MICHELSON DRIVE SUITE 100 IRVINE CA 92612

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Apodaca, Mac D San Jose, US 31 109
Shepard, Daniel R North Hampton, US 61 657

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