MEMS devices utilizing a thick metal layer of an interconnect metal film stack
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United States of America Patent
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Nov 15, 2016
Grant Date -
Dec 24, 2015
app pub date -
Aug 28, 2015
filing date -
Aug 23, 2013
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Abstract
A MEMS device, such as an accelerometer or gyroscope, fabricated in interconnect metallization compatible with a CMOS microelectronic device. In embodiments, a proof mass has a first body region utilizing a thick metal layer that is separated from a thin metal layer. The thick metal layer has a film thickness that is significantly greater than that of the thin metal layer for increased mass. The proof mass further includes a first sensing structure comprising the thin metal layer, but lacking the thick metal layer for small feature sizes and increased capacitive coupling to a surrounding frame that includes a second sensing structure comprising the thin metal layer, but also lacking the thick metal layer. In further embodiments, the frame is released and includes regions with the thick metal layer to better match film stress-induced static deflection of the proof mass.
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