Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method

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United States of America Patent

PATENT NO 9494851
APP PUB NO 20150017574A1
SERIAL NO

14348413

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Abstract

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Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

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Patent Owner(s)

Patent OwnerAddress
HOYA CORPORATION6-10-1 NISHI-SHINJUKU SHINJUKU-KU TOKYO 160-8347

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamamoto, Kazuhiro Shinjuku-ku, JP 44 231
Horikawa, Junichi Shinjuku-ku, JP 26 703
Kozakai, Hirofumi Shinjuku-ku, JP 17 100
Orihara, Toshihiko Shinjuku-ku, JP 17 102
Shoki, Tsutomu Shinjuku-ku, JP 81 679
Usui, Youichi Shinjuku-ku, JP 7 39

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