Method of charge controlled patterning during reactive ion etching
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 15, 2016
Grant Date -
N/A
app pub date -
Sep 10, 2015
filing date -
Sep 10, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of reactive ion etching a wafer includes providing a plasma processing tool having a wafer chuck within a chamber and an electrode creating a plasma above the wafer chuck. There is provided on the wafer chuck a semiconductor wafer having a p− layer and an n+ layer. Both p− and n+ layers have exposed peripheral edges during plasma etching to electrically form with the plasma processing tool during plasma etching a diode having an anode comprising the plasma, a cathode comprising the wafer chuck and a gate comprising the n+ layer peripheral edge. The method includes controlling charge flow during plasma etching adjacent the peripheral edge of the n+ layer to reduce charge transport into, within and out of the semiconductor wafer adjacent the n+ layer edge, and reactive ion etching the n+ layer while controlling the charge flow along the edge of the n+ layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully