Nonvolatile semiconductor storage device
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United States of America Patent
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Nov 15, 2016
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app pub date -
Nov 18, 2015
filing date -
Sep 8, 2011
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Abstract
A nonvolatile semiconductor storage device includes a plurality of electrode films stacked in a first direction; a silicon pillar piercing the stacked electrode films and separated therefrom by a block insulating film; a charge storage film provided between the block insulating film and the silicon pillar; and a tunnel insulating film provided between the charge storage film and the silicon pillar. The tunnel insulating film comprises a first insulating film having silicon oxide as a base material and containing an added element, wherein a density of the element increases from the silicon pillar toward the charge storage film.
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