Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition

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United States of America Patent

PATENT NO 9496282
APP PUB NO 20150155307A1
SERIAL NO

14093658

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Abstract

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FinFET devices and methods of making the same. A structure includes: a substrate with a buried insulator, a plurality of fins over a recessed buried insulator, and a nitride material filing recessed spaces between the plurality of fins, wherein the plurality of fins remain uncovered by the nitride, and wherein the nitride material does not contact the bottom of the plurality of fins.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adam, Thomas N Slingerlands, US 146 2311
Cheng, Kangguo Slingerlands, US 3073 29791
Khakifirooz, Ali Los Altos, US 842 11906
Reznicek, Alexander Troy, US 1407 11211
Sreenivasan, Raghavasimhan Schenectady, US 49 730

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