High-density integrated circuit via capacitor
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United States of America Patent
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Nov 15, 2016
Grant Date -
N/A
app pub date -
Oct 16, 2015
filing date -
Oct 16, 2015
priority date (Note) -
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Abstract
A capacitor can be fabricated within an integrated circuit (IC) by creating, in a top surface of a dielectric layer of the IC, a recess having at least one side and a bottom, the bottom adjacent to a first conductive structure. A first plate of the capacitor may be formed by depositing a conductive liner onto the at least one side and the bottom of the recess. A conformal dielectric film may be deposited onto the first plate within the recess, and a second plate of the capacitor may be formed by filling a portion of the recess that is not filled by the conformal dielectric film with an electrically conductive material that is electrically insulated, by the conformal dielectric film, from the first plate.
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