Semiconductor device
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United States of America Patent
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Nov 15, 2016
Grant Date -
N/A
app pub date -
Feb 4, 2016
filing date -
Sep 2, 2015
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the second conductivity type, and an insulating unit. The fourth semiconductor region is separated from the third semiconductor region. A carrier concentration of the second conductivity type of the fourth semiconductor region is higher than a carrier concentration of the second conductivity type of the second semiconductor region. The fourth semiconductor region protrudes below more than the third semiconductor region. The insulating unit is provided on a portion of the second semiconductor region positioned between the third semiconductor region and the fourth semiconductor region and on the fourth semiconductor region.
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