Under-spacer doping in fin-based semiconductor devices

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United States of America Patent

PATENT NO 9496356
APP PUB NO 20160064501A1
SERIAL NO

14879159

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Abstract

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A fin field effect transistor (FinFET) device and a method of fabricating the FinFET are described. The device includes a fin formed on a substrate, the fin including a channel region of the device and a spacer and a cap formed over a dummy gate line separating a source and drain of the device. The device also includes an epitaxial layer formed over portions of the fin, the epitaxial layer being included between the fin and the spacer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schenectady, US 487 4269
Cheng, Kangguo Schenectady, US 3065 29582
Khakifirooz, Ali Mountain View, US 841 11865
Koburger,, III Charles W Delmar, US 105 1620

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