Semiconductor device and method of forming the same

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United States of America Patent

PATENT NO 9496383
APP PUB NO 20140299928A1
SERIAL NO

14307889

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Abstract

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A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in the semiconductor substrate, the first diffusion region covering an upper portion of a first side of the first gate groove; and a second diffusion region in the semiconductor substrate. The second diffusion region covers a second side of the first gate groove. The second diffusion region has a bottom which is deeper than a top of the first fin structure.

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Patent Owner(s)

Patent OwnerAddress
LONGITUDE LICENSING LIMITEDBRACKEN ROAD SANDYFORD FIRST FLOOR BLACKTHORN EXCHANGE DUBLIN D18 P3Y9

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamada, Koji Tokyo, JP 50 535
Oyu, Kiyonori Tokyo, JP 67 585
Taketani, Hiroaki Tokyo, JP 19 169
Taniguchi, Koji Tokyo, JP 91 1521

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