Float zone silicon wafer manufacturing system and related process
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United States of America Patent
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Nov 22, 2016
Grant Date -
Jun 11, 2015
app pub date -
Feb 18, 2015
filing date -
Jul 30, 2012
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Abstract
The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.
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