Deposition of conformal films by atomic layer deposition and atomic layer etch

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United States of America Patent

PATENT NO 9502238
APP PUB NO 20160293398A1
SERIAL NO

14678736

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Abstract

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Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Danek, Michal Cupertino, US 112 8592
Henri, Jon West Linn, US 62 9176
Tang, Shane West Linn, US 9 2420

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