Pattern formation method that includes partially removing line and space pattern
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 22, 2016
Grant Date -
Feb 4, 2016
app pub date -
Jul 15, 2015
filing date -
Aug 1, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a pattern formation method of forming a pattern on a substrate by partially removing a line and space pattern formed on the substrate, comprising a first formation step of forming a first layer including a plurality of first openings on the line and space pattern, a second step of forming, on the first layer, a second layer including a second opening for exposing one or more first openings, which are used to partially remove the line and space pattern, among the plurality of first openings, and a removing step of partially removing the line and space pattern through the second opening and the first opening, wherein the plurality of first openings are located on a plurality of lines of the line and space pattern.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully