Silicon-on-plastic semiconductor device and method of making the same
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United States of America Patent
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Jan 17, 2017
Grant Date -
Apr 30, 2015
app pub date -
Oct 31, 2014
filing date -
Oct 31, 2014
priority date (Note) -
Withdrawn
status (Latency Note)
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Abstract
A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on an opposite side of the semiconductor stack structure from the first surface. At least one device terminal is included in the semiconductor stack structure and at least one electrical contact extends from the second surface and is electrically coupled to the at least one device terminal. The semiconductor stack is protected by a polymer disposed on the first surface of the semiconductor stack. The polymer has high thermal conductivity and high electrical resistivity.
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