Alignment mark formation method and semiconductor device

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United States of America Patent

PATENT NO 9502357
APP PUB NO 20160268211A1
SERIAL NO

14799787

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Abstract

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According to one embodiment, at first, a first pattern is formed to an insulating film. Then, a first transparent film is formed on a region of the insulating film, which includes a position where the first pattern is formed. Thereafter, an opaque film which is opaque to light within a visible light region is formed on an entire surface of the insulating film. Then, a second transparent film is generated by selectively oxidizing part of the opaque film in contact with the first transparent film.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hagio, Yoshinori Kuwana, JP 11 61

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