Strained finFET device fabrication
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United States of America Patent
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Nov 22, 2016
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N/A
app pub date -
Aug 24, 2015
filing date -
Aug 20, 2015
priority date (Note) -
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Abstract
A method for forming a fin on a substrate comprises patterning and etching a layer of a first semiconductor material to define a strained fin, depositing a layer of a second semiconductor material over the fin, the second semiconductor material operative to maintain the a strain in the strained fin, etching to remove a portion of the second semiconductor material to define a cavity that exposes a portion of the fin, etching to remove the exposed portion of the fin such that the fin is divided into a first segment and a second segment, and depositing an insulator material in the cavity, the insulator material contacting the first segment of the fin and the second segment of the fin.
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