Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions
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United States of America Patent
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Nov 22, 2016
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app pub date -
Apr 10, 2015
filing date -
Apr 10, 2015
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Abstract
A method used while forming a magnetic tunnel junction comprises forming non-magnetic tunnel insulator material over magnetic electrode material. The tunnel insulator material comprises MgO and the magnetic electrode material comprises Co and Fe. B is proximate opposing facing surfaces of the tunnel insulator material and the magnetic electrode material. B-absorbing material is formed over a sidewall of at least one of the magnetic electrode material and the tunnel insulator material. B is absorbed from proximate the opposing facing surfaces laterally into the B-absorbing material. Other embodiments are disclosed, including magnetic tunnel junctions independent of method of manufacture.
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