Solid state imaging device and image acquisition method using solid state imaging elements having a PN junction
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United States of America Patent
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Nov 22, 2016
Grant Date -
Jun 18, 2015
app pub date -
Dec 11, 2014
filing date -
Dec 11, 2013
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Abstract
A solid state imaging device includes: solid state imaging elements having a first electrode, a ferroelectric layer, and a transparent second electrode laminated together, and a PN junction between the ferroelectric layer and the first or second electrode; a controller acquiring brightness information of an imaging target, and determining whether each solid state imaging element is set to operate in a high or low sensitivity mode based on the brightness information; and a circuit applying a voltage to the solid state imaging element based on the determination, and setting the solid state imaging element to operate in the high or low sensitivity mode, in which a photovoltaic current from the solid state imaging element which is set to operate in the high or low sensitivity mode is detected, and an image is acquired based on the detection result.
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