Nonvolatile semiconductor memory device of variable resistive type with reduced variations of forming current after breakdown
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 29, 2016
Grant Date -
Dec 12, 2013
app pub date -
Jun 4, 2013
filing date -
Jun 8, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A device including a memory cell including a variable resistive memory element; a capacitor; a voltage generation circuit; and a switch circuit including a first switch and a second switch. The first switch is coupled between the voltage generation circuit and the capacitor without an intervention of the second switch. The second switch is coupled between the capacitor and the memory cell without an intervention of the first switch. The first switch is configured to take an on-state during a first period of time and an off-state during a second period of time following the first period of time and the second switch is configured to take an off-state during the first period of time and an on-state during the second period of time.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully