Single damascene interconnect structure
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United States of America Patent
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Nov 29, 2016
Grant Date -
Mar 10, 2016
app pub date -
Oct 20, 2015
filing date -
Sep 10, 2014
priority date (Note) -
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Abstract
A single damascene interconnect structure which includes a first layer that includes a first dielectric material having a first filled opening that has a barrier layer of a refractory material with Cu filling the first filled opening. Also included is a second layer of a second dielectric material having a second filled opening that has a sidewall layer which includes a compound of a metal, O, and Si such that the metal is Mn, Ti and Al, and with Cu filling the second filled opening. The compound is in direct contact with the second dielectric material. The first layer is adjacent to the second layer and the first filled opening is aligned with the second filled opening so that the first filled opening is a via and the second filled opening is a trench.
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