Stacked graphene field-effect transistor

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United States of America Patent

PATENT NO 9508801
SERIAL NO

14591988

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Abstract

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In an aspect of the present invention, a graphene field-effect transistor (GFET) structure is formed. The GFET structure comprises a wider portion and a narrow extension portion extending from the wider portion that includes one or more graphene layers edge contacted to source and drain contacts, wherein the source and drain contacts are self-aligned to the one or more graphene layers.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Franklin, Aaron D Croton on Hudson, US 49 487
Miyazoe, Hiroyuki White Plains, US 103 888
Oida, Satoshi Yorktown Heights, US 21 144
Smith, Joshua T Croton on Hudson, US 152 752

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