Punch through stopper for semiconductor device

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United States of America Patent

PATENT NO 9508833
SERIAL NO

14962101

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Abstract

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A method for forming a semiconductor device comprises, forming a fin on a semiconductor substrate, forming spacers adjacent to the fin, etching to remove exposed portions of the semiconductor substrate adjacent to the spacers to form a trench adjacent to the spacers, removing the spacers, implanting dopants in the semiconductor substrate adjacent to the fin and in the trench, and performing an annealing process to diffuse the dopants in the semiconductor substrate and form a punch through stopper region below the fin that includes the dopants.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Leobandung, Effendi Stormville, US 536 4779
Yamashita, Tenko Schenectady, US 599 4981

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