Monolithically isled back contact back junction solar cells
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United States of America Patent
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Dec 6, 2016
Grant Date -
Dec 18, 2014
app pub date -
Feb 12, 2014
filing date -
Nov 5, 2012
priority date (Note) -
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Abstract
According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.
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