Continuous plasma etch process

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United States of America Patent

PATENT NO 9530658
APP PUB NO 20150348792A1
SERIAL NO

14825115

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Abstract

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A method for processing a substrate in a process chamber is provided. A plurality of cycles is provided to process the substrate, wherein each cycle comprises the steps of providing a flow of a first process gas into the process chamber, stopping the flow of the first process gas into the process chamber, providing a flow of a first transition gas into the process chamber, wherein the first transition gas neutralizes a component of the first process gas, stopping the flow of the first transition gas into the process chamber, providing a flow of a second process gas into the process chamber, stopping the second process gas into the process chamber, and maintaining a continuous plasma during the cycle.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fu, Qian Pleasanton, US 66 937
Lee, Wonchul San Ramon, US 34 253

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