Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity

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United States of America Patent

PATENT NO 9530669
SERIAL NO

14954051

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Abstract

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A semiconductor device comprising a substrate having a region protruding from the substrate surface; a relaxed semiconductor disposed on the region; an additional semiconductor disposed on the relaxed semiconductor; and low density dielectric disposed next to and at least partially underneath the relaxed semiconductor and adjacent to the protruding region of the substrate.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balakrishnan, Karthik White Plains, US 334 2019
Cheng, Kangguo Schenectady, US 3065 29582
Hashemi, Pouya White Plains, US 599 4445
Reznicek, Alexander Troy, US 1406 11120

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