Semiconductor switch, wireless apparatus, and method of designing semiconductor switch

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United States of America Patent

PATENT NO 9530797
APP PUB NO 20150348993A1
SERIAL NO

14634866

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Abstract

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A semiconductor switch on a SOI substrate that includes a supporting substrate, an insulating layer on the supporting substrate, and a semiconductor layer provided on the insulating layer, includes a first and a second through FET groups, each including a plurality of field effect transistors connected in series between a common node and a first and second node, respectively. The first through FET group has an area equal to or less than an area Sfet, which is calculated by using an equivalent circuit including a resistance that represents leakage of a high frequency signal from the first through FET group to the supporting substrate.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kunishi, Yugo Yokohama Kanagawa, JP 9 47
Seshita, Toshiki Kawasaki Kanagawa, JP 77 443

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