Semiconductor devices
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United States of America Patent
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Dec 27, 2016
Grant Date -
Jul 21, 2016
app pub date -
Jan 15, 2015
filing date -
Jan 15, 2015
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Abstract
Some embodiments include a device having an n-type diffusion region, and having a boron-doped region within the n-type diffusion region. The boron-doped region extends no deeper than about 10 nanometers from an upper surface of the n-type diffusion region. Some embodiments include a method in which first boron-enhanced regions are formed within upper portions of n-type source/drain regions of an NMOS (n-type metal-oxide-semiconductor) device and second boron-enhanced regions are simultaneously formed within upper portions of p-type source/drain regions of a PMOS (p-type metal-oxide-semiconductor) device. The first and second boron-enhanced regions extend to depths of less than or equal to about 10 nanometers.
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