Semiconductor device
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United States of America Patent
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Dec 27, 2016
Grant Date -
Mar 10, 2016
app pub date -
Mar 2, 2015
filing date -
Sep 5, 2014
priority date (Note) -
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Abstract
A semiconductor device includes a first semiconductor region of a second conductivity type, and a second semiconductor region of a first conductivity type. A third semiconductor region of a first conductivity type is selectively provided on the second semiconductor region. A fourth semiconductor region of the first conductivity type and a fifth semiconductor region of the second conductivity type are selectively provided on the third semiconductor region. A first electrode is provided on a second insulating film within the second semiconductor region. A second electrode is in contact with the fifth semiconductor region and the third semiconductor region. The sixth semiconductor region is provided on the second semiconductor region at least in a portion thereon other than the area where the third semiconductor region is provided. The sixth semiconductor region is not in contact with the second electrode.
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