Semiconductor device with epitaxial structure and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 27, 2016
Grant Date -
N/A
app pub date -
Dec 21, 2015
filing date -
Nov 27, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes a substrate, a gate structure, a spacer, and a plurality of hyper-sigma (Σ) shaped epitaxial stressors. The substrate includes a first semiconductor material, and the hyper-Σ shaped epitaxial stressors include the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. The hyper-Σ shaped epitaxial stressors respectively include a first portion, a second portion and a neck physically connecting the first portion and the second portion. The first portion includes a pair of first tips pointing toward the gate structure in a cross-sectional view. The second portion includes a pair of second tips pointing toward the gate structure in the cross-sectional view. The neck includes a first slanted surface in the first portion and a second slanted surface in the second portion.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully