Photomask with three states for forming multiple layer patterns with a single exposure

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United States of America Patent

PATENT NO 9535316
SERIAL NO

14030755

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Abstract

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The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jeng-Horng Hsin-Chu, TW 137 3250
Lu, Yen-Cheng New Taipei, TW 85 1437
Shih, Chih-Tsung Hsinchu, TW 146 2276
Yen, Anthony Hsinchu, TW 157 3414
Yu, Shinn-Sheng Hsinchu, TW 132 3917

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