Magnetic memory, spin element, and spin MOS transistor
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United States of America Patent
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Jan 3, 2017
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app pub date -
Nov 23, 2015
filing date -
Apr 3, 2013
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Abstract
A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.
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