Semiconductor socket with direct selective metalization
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United States of America Patent
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Jan 3, 2017
Grant Date -
Oct 1, 2015
app pub date -
Mar 14, 2013
filing date -
May 28, 2009
priority date (Note) -
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Abstract
A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A conductive structure is disposed within the through holes A plurality of discrete contact members are located in the plurality of the through holes, within the conductive structure. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. The conductive structure can be electrically coupled to circuit geometry. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to desired circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.
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