Devices having multiple threshold voltages and method of fabricating such devices
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United States of America Patent
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Jan 3, 2017
Grant Date -
Oct 13, 2016
app pub date -
May 5, 2015
filing date -
Apr 7, 2015
priority date (Note) -
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Abstract
Methods of fabricating devices (e.g., FDSOI devices) having multiple threshold voltages are described. One method includes providing a first fixed charge region proximate to an interface of an insulating (e.g., buried oxide (BOX) layer) and a semiconductor substrate for a first device. The first charge region has a first configuration of fixed charges. The method also includes providing a second fixed charge region proximate to the interface of the insulating layer and the semiconductor substrate for the second device. The second charge region has a second configuration of fixed charges that is different than the first configuration.
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