Interfacial materials for use in semiconductor structures and related methods

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United States of America Patent

PATENT NO 9536940
APP PUB NO 20140080283A1
SERIAL NO

13622667

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Abstract

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A method of forming a semiconductor structure. The method comprises forming a high-k dielectric material, forming a continuous interfacial material over the high-k dielectric material, and forming a conductive material over the continuous interfacial material. Additional methods and semiconductor structures are also disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sigman, Jennifer K Boise, US 4 52
Song, Zhe Boise, US 18 106

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