Parasitic capacitance reduction

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United States of America Patent

PATENT NO 9536988
SERIAL NO

14968301

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Abstract

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A method of making a semiconductor device includes forming a gate on a substrate; removing an end portion of the gate to form a recess at an end of the gate; depositing a low-k material in the recess such that an air gap is formed in the low-k material; removing a portion of the low-k material; depositing an insulating material on the low-k material that was recessed to form a bilayer insulating stack; and forming a source/drain contact on an active area positioned on the substrate and alongside the gate.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pranatharthiharan, Balasubramanian Watervliet, US 225 1263
Wang, Junli Slingerlands, US 492 2776

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