Methods of forming replacement fins for a FinFET device using a targeted thickness for the patterned fin etch mask
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United States of America Patent
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Jan 3, 2017
Grant Date -
Dec 1, 2016
app pub date -
Jun 1, 2015
filing date -
Jun 1, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
One method disclosed herein includes, among other things, forming a patterned fin having a thickness that is equal to or greater than a target final fin height for a replacement fin, performing an etching process through the patterned fin etch mask to form a plurality of trenches in a semiconductor substrate to define a substrate fin and forming a recessed layer of insulating material in the trenches so as to expose the patterned fin etch. The method also includes forming a layer of CTE-matching material around the exposed patterned fin etch mask, removing the patterned fin etch mask to thereby define a replacement fin cavity and expose a surface of the substrate fin, forming the replacement fin on the substrate fin and in the replacement fin cavity, removing the layer of CTE-matching material and forming a gate structure around at least a portion of the replacement fin.
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