Linear magnetoresistive random access memory device with a self-aligned contact above MRAM nanowire
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United States of America Patent
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Jan 3, 2017
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N/A
app pub date -
Nov 24, 2015
filing date -
Aug 20, 2015
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Abstract
A technique relates to a linear magnetoresistive random access memory (MRAM) device. A linear magnetic tunnel junction structure includes a non-magnetic tunnel barrier on top of a reference layer and a free layer on top of the non-magnetic tunnel barrier, where the linear magnetic tunnel junction structure is in a line. Magnetoresistive random access memory (MRAM) devices are formed of the reference layer, the non-magnetic tunnel barrier, and the free layer, each of the MRAM devices are in the line. Self-aligned contacts are formed on top of the linear magnetic tunnel junction structure, and the self-aligned contacts individually define the MRAM devices. The self-aligned contacts are separated from one another in the line. Bottom conductive vias are underneath the linear magnetic tunnel junction structure. The bottom conductive vias abut the reference layer of the linear magnetic tunnel junction structure.
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