Anode structure having silicon elements

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United States of America Patent

PATENT NO 9537147
SERIAL NO

14142789

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Abstract

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An anode structure may include a first bus bar having a first conductive coating, a second bus bar having a second conductive coating, and a plurality of silicon elements between the first bus bar and the second bus bar with a first void between a first one of the silicon elements and a second one of the silicon elements. Additionally, at least the first one of the silicon elements to expand into the first void.

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  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Keates, Andy Los Gatos, US 24 350

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