Methods of etching films with reduced surface roughness

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United States of America Patent

PATENT NO 9540736
SERIAL NO

14793977

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Abstract

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Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

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Patent OwnerAddress
APPLIED MATERIALS INCP O BOX 450-A SANTA CLARA CA 95052

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anthis, Jeffrey W San Jose, US 89 4744
Benjaminson, David Santa Clara, US 15 1036
Ingle, Nitin K Santa Clara, US 224 38347
Liu, Jie Sunnyvale, US 812 14130
Nemani, Srinivas D Sunnyvale, US 260 12845
Schmiege, Benjamin Santa Clara, US 29 1415
Wang, Xikun Sunnyvale, US 61 7960

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