Systems and methods for forming ultra-shallow junctions

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United States of America Patent

PATENT NO 9543150
APP PUB NO 20160365251A1
SERIAL NO

14735541

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Abstract

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A method for forming a junction on a substrate includes removing a native oxide layer of a bulk material; doping an outer layer of the bulk material with molecular hydrogen to create a hydrogen-doped outer layer; and nano-doping the hydrogen-doped outer layer using one of boron or phosphorous to a target junction depth to create a nano-doped layer.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Berry, Ivan San Jose, US 26 1361
Hong, YounGi Pleasanton, US 1 3
Kim, Yunsang Monte Sereno, US 77 3006

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