Methods of fabricating semiconductor devices using nanowires

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United States of America Patent

PATENT NO 9543196
APP PUB NO 20160064277A1
SERIAL NO

14674332

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Abstract

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Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Im, Dong-Hyun Suwon-si, KR 46 442
Lee, Jong-Myeong Seongnam-si, KR 79 633
Lee, Soon-Gun Hwaseong-si, KR 2 53
Lim, Han-Jin Seoul, KR 51 396
Park, Hyun Suwon-si, KR 61 455

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