Multi-directional trenching of a die in manufacturing superjunction devices

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United States of America Patent

PATENT NO 9543380
APP PUB NO 20110254137A1
SERIAL NO

13169378

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Abstract

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A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.

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Patent Owner(s)

  • ICEMOS TECHNOLOGY LTD.;SHORE, MICHAEL W.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Griffin, Hugh J Newtownabbey, GB 34 665
Ishiguro, Takeshi Fukushima-ken, JP 48 553
Sugiura, Kenji Kanagawa, JP 182 2604

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