Semiconductor light emitting device and method for manufacturing same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9543484
SERIAL NO

15065146

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Abstract

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According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface; a p-side electrode; an n-side electrode; a p-side pillar; an n-side pillar; a first insulating layer; an optical layer; a second insulating layer; a first layer; a p-side interconnect; and an n-side interconnect. The first layer includes a first lower end portion and a second lower end portion.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Endo, Mitsuyoshi Yamato, JP 29 346
Furuyama, Hideto Yokohama, JP 215 2097
Itonaga, Shuji Yokohama, JP 19 182
Nomura, Yukihiro Fuchu, JP 56 725
Shimojuku, Miyuki Kawasaki, JP 9 75

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