Method for forming a doped metal oxide for use in resistive switching memory elements

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United States of America Patent

PATENT NO 9543516
APP PUB NO 20160172588A1
SERIAL NO

14317255

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Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.

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INTERMOLECULAR INCCALIFORNIA USA CALIFORNIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gopal, Vidyut Sunnyvale, US 47 1325
Hashim, Imran Saratoga, US 125 2666
Higuchi, Randall San Jose, US 7 60
Tong, Jinhong Santa Clara, US 45 1388

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