Wafer imaging and processing method and apparatus
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United States of America Patent
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Jan 17, 2017
Grant Date -
Nov 12, 2015
app pub date -
Jul 22, 2015
filing date -
Mar 31, 2008
priority date (Note) -
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Abstract
A method is disclosed whereby luminescence images are captured from as-cut or partially processed bandgap materials such as multicrystalline silicon wafers. These images are then processed to provide information about defects such as dislocations within the bandgap material. The resultant information is then utilized to predict various key parameters of a solar cell manufactured from the bandgap material, such as open circuit voltage and short circuit current. The information may also be utilized to apply a classification to the bandgap material. The methods can also be used to adjust or assess the effect of additional processing steps, such as annealing, intended to reduce the density of defects in the bandgap materials.
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