Semiconductor device with metal extrusion formation
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United States of America Patent
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Jan 17, 2017
Grant Date -
Dec 31, 2015
app pub date -
Jun 25, 2014
filing date -
Jun 25, 2014
priority date (Note) -
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Abstract
Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.
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